vishay siliconix SI7655DN new product document number: 63617 s12-2393-rev. b, 15-oct-12 www.vishay.com 1 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com p-channel 20 v (d-s) mosfet features ? trenchfet ? power mosfet ? low thermal resistance powerpak ? package with small size and low 0.75 mm profile ?100 % r g and uis tested ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? smart phones, tablet pcs, mobile computing - battery switch - load switch notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. c. see solder profile ( www.vishay.com/doc?73257 ). the powerpak 1212-8s is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the si ngulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bo ttom side solder interconnection. d. rework conditions: manual solder ing with a soldering iron is not recommended for leadless components. e. package limited. product summary v ds (v) r ds(on) ( ? ) max. i d (a) q g (typ.) - 20 0.0036 at v gs = - 10 v - 40 e 72 nc 0.0048 at v gs = - 4.5 v - 40 e 0.0085 at v gs = - 2.5 v - 40 e orderin g information: si7655d n -t1-ge3 (lead (p b )-free and halogen-free) bottom view 3.3 mm 3.3 mm g 1 2 3 4 8 7 6 5 s s s d d d d powerpak 1212-8s 0.75 mm s g d p-channel mosfet absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d - 40 e a t c = 70 c - 40 e t a = 25 c - 31 a, b t a = 70 c - 25 a, b pulsed drain current (t = 300 s) i dm - 100 continuous source-drain diode current t c = 25 c i s - 40 e t a = 25 c - 4 a, b avalanche current l = 0.1 mh i as - 20 single-pulse avalanche energy e as 20 mj maximum power dissipation t c = 25 c p d 57 w t c = 70 c 36 t a = 25 c 4.8 a, b t a = 70 c 3 a, b operating junction and storage temperature range t j , t stg - 50 to 150 c soldering recommendations (peak temperature) c, d 260
www.vishay.com 2 document number: 63617 s12-2393-rev. b, 15-oct-12 vishay siliconix SI7655DN new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com notes: a.surface mounted on 1" x 1" fr4 board. b.maximum under steady stat e conditions is 63 c/w. notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. c. package limited. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a, b t ?? 10 s r thja 21 26 c/w maximum junction-to-case (drain) steady state r thjc 1.7 2.2 specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 20 v v ds temperature coefficient ? v ds /t j i d = - 250 a - 12 mv/ c v gs(th) temperature coefficient ? v gs(th) /t j 2.6 gate-source threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.5 - 1.1 v gate-source leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v - 1 a v ds = - 20 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds ? - 5 v, v gs = - 10 v - 20 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 20 a 0.0030 0.0036 ? v gs = - 4.5 v, i d = - 15 a 0.0039 0.0048 v gs = - 2.5 v, i d = - 10 a 0.0062 0.0085 forward transconductance a g fs v ds = - 15 v, i d = - 20 a 90 s dynamic b input capacitance c iss v ds = - 10 v, v gs = 0 v, f = 1 mhz 6600 pf output capacitance c oss 890 reverse transfer capacitance c rss 930 total gate charge q g v ds = - 10 v, v gs = - 10 v, i d = - 20 a 150 225 nc v ds = - 10 v, v gs = - 4.5 v, i d = - 20 a 72 110 gate-source charge q gs 12 gate-drain charge q gd 19 gate resistance r g f = 1 mhz 0.5 2.6 5.2 ? tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 1 ? i d ? - 10 a, v gen = - 4.5 v, r g = 1 ? 45 90 ns rise time t r 45 90 turn-off delaytime t d(off) 100 200 fall time t f 35 70 tu r n - o n d e l ay t i m e t d(on) v dd = - 10 v, r l = 1 ? i d ? - 10 a, v gen = - 10 v, r g = 1 ? 13 25 rise time t r 10 20 turn-off delaytime t d(off) 110 220 fall time t f 25 50 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c - 40 c a pulse diode forward current a i sm - 100 body diode voltage v sd i f = - 10 a - 0.75 - 1.2 v body diode reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s, t j = 25 c 30 60 ns body diode reverse recovery charge q rr 17 26 nc reverse recovery fall time t a 15 ns reverse recovery rise time t b 15
SI7655DN document number: 63617 s12-2393-rev. b, 15-oct-12 www.vishay.com 3 vishay siliconix new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 20 40 60 80 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 i d - drain current (a) v ds - drain-to-source voltage (v) v gs = 10 v thru 3 v v gs = 2 v 0.000 0.004 0.008 0.012 0.016 0.020 0 20 40 60 80 100 r ds(on) - on-resistance () i d - drain current (a) v gs = 4.5 v v gs = 2.5 v v gs = 10 v 0 2 4 6 8 10 0 30 60 90 120 150 v gs - gate-to-source voltage (v) q g - total gate charge (nc) v ds = 16 v v ds = 5 v v ds = 10 v i d = 20 a transfer characteristics capacitance on-resistance vs. junction temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 i d - drain current (a) v gs - gate-to-source voltage (v) t c = 25 c t c = 125 c t c = - 55 c 0 1500 3000 4500 6000 7500 9000 0 4 8 12 16 20 c - capacitance (pf) v ds - drain-to-source voltage (v) c iss c oss c rss 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 50 - - 25 0 25 50 75 100 125 150 r ds(on) - on-resistance (normalized) t j - junction temperature ( c) v gs = 2.5 v v gs = 4.5 v i d = 20 a v gs = 10 v
www.vishay.com 4 document number: 63617 s12-2393-rev. b, 15-oct-12 vishay siliconix SI7655DN new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 i s - source current (a) v sd - source-to-drain voltage (v) t j = 150 c t j = 25 c 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 v gs(th) (v) t j - temperature ( c) i d = 250 a on-resistance vs. gate-to-source voltage single pulse power junction-to-ambient 0.000 0.004 0.008 0.012 0.016 0.020 0246810 r ds(on) - on-resistance () v gs - gate-to-source voltage (v) t j = 125 c t j = 25 c i d = 20 a 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 power (w) time (s) safe operating area, junction-to-ambient 0.01 0.1 1 10 100 1000 0.1 1 10 100 i d - drain current (a) v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 10 s 100 us 100 ms limited by r ds(on) * 1 ms t a = 25 c bvdss limited 10 ms 1 s dc
SI7655DN document number: 63617 s12-2393-rev. b, 15-oct-12 www.vishay.com 5 vishay siliconix new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 20 40 60 80 100 120 0 25 50 75 100 125 150 i d - drain current (a) t c - case temperature ( c) package limited power junction-to-case 0 10 20 30 40 50 60 70 0255075100125150 power (w) t c - case temperature ( c) normalized thermal transient impedance junction-to-ambient 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 63 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rface mo u nted
www.vishay.com 6 document number: 63617 s12-2393-rev. b, 15-oct-12 vishay siliconix SI7655DN new product this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 for technical questions, contact: pmostechsupport@vishay.com typical characteristics (25 c, unless otherwise noted) vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63617 . normalized thermal transient impedance, junction-to-case 0.1 1 0.0001 0.001 0.01 0.1 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
package information www.vishay.com vishay siliconix revision: 12-mar-12 1 document number: 63919 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 case outline for powerpak ? 1212-8s note ? millimeters will govern. dim. millimeters inches min. nom. max. min. nom. max. a 0.67 0.75 0.83 0.027 0.030 0.033 a1 0 - 0.05 0 - 0.002 a3 0.20 ref 0.008 ref b 0.30 bsc 0.012 bsc d 3.30 bsc 0.130 bsc d1 2.15 2.25 2.35 0.084 0.088 0.092 e 3.30 bsc 0.130 bsc e1 1.60 1.70 1.80 0.063 0.067 0.071 e 0.65 bsc 0.026 bsc k 0.76 typ 0.030 typ k1 0.41 typ 0.016 typ l 0.43 bsc 0.017 bsc z 0.525 typ 0.021 typ ecn: c12-0200-rev. a, 12-mar-12 dwg: 6008 1 2 3 4 5 6 7 8 1 2 3 4 56 78 d e d1 e1 k1 z l b k e a3 a1 a c d 0.08 c f 0.10 c d 0.10 c 2x d 0.10 c 2x
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